Influence of Block Oxide Width on a Silicon-on-Partial-Insulator Field-Effect Transistor.
In: IEEE Transactions on Electron Devices, Jg. 54 (2007-11-01), Heft 11, S. 2893-2900
Online
academicJournal
Zugriff:
In this paper, the influence of block oxide width (WBO) variations on a newly designed 40-nm gate-length silicon-on-partial-insulator field-effect transistor with block oxide (bSPIFET) was demonstrated and characterized. By utilizing the block oxide (BO) enclosing the sidewall of the Si body, the charge sharing from the source/drain (S/D) regions for a bSPIFET can be significantly reduced. Essentially, because the BO is adopted for a bSPIFET, its ultrashort-channel characteristics are similar to an ultrathin-body silicon-on-insulator (UTBSOI), although it possesses a thicker S/D region than a UTBSOI. From the simulation tests, it was also found that although the wider BO can suppress the ultrashort-channel effects (USCEs), the drain ON-state current ION slightly decreases because certain areas of the S/D are occupied by BO. Despite this problem, the bSPIFET still exhibits a good USCE control and a high-drive current. In addition, the self-heating effects are also ameliorated as a result of the natural body-tied scheme. [ABSTRACT FROM AUTHOR]
Titel: |
Influence of Block Oxide Width on a Silicon-on-Partial-Insulator Field-Effect Transistor.
|
---|---|
Autor/in / Beteiligte Person: | Lin, Jyi-Tsong ; Eng, Yi-Chuen |
Link: | |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 54 (2007-11-01), Heft 11, S. 2893-2900 |
Veröffentlichung: | 2007 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) |
DOI: | 10.1109/TED.2007.906925 |
Schlagwort: |
|
Sonstiges: |
|