Preparation and Properties of Highly Oriented LaNiO3 Thin Films on Different Substrates.
In: Ferroelectrics, Jg. 357 (2007-09-15), Heft 1, S. 53-57
academicJournal
Zugriff:
Highly (100) and (110) oriented LaNiO3 (LNO) thin films were prepared on various substrates, including Si (100), Si (111), SiO2/Si, Si3N4/Si by a metal-organic decomposition (MOD) method. Two different thermal processes were employed to crystallize LNO films. XRD analysis showed different thermal processes led to different preferential orientations of LNO films. The orientation dependence of LNO films on annealing process has been investigated. FESEM and AFM images show LNO films are uniform and crack-free. Low resistivity and high infrared absorbability make LNO thin film a promising electrode and infrared absorbed material for IR detector applications. [ABSTRACT FROM AUTHOR]
Titel: |
Preparation and Properties of Highly Oriented LaNiO3 Thin Films on Different Substrates.
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Autor/in / Beteiligte Person: | Yang, Xian ; Wu, Xiaoqing ; Ren, Wei ; Shi, Peng ; Yan, Xin ; Lei, Hongsheng ; Yao, Xi |
Zeitschrift: | Ferroelectrics, Jg. 357 (2007-09-15), Heft 1, S. 53-57 |
Veröffentlichung: | 2007 |
Medientyp: | academicJournal |
ISSN: | 0015-0193 (print) |
DOI: | 10.1080/00150190701527878 |
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