Modeling of rapid particle growth by coagulation in silane plasma reactor.
In: Journal of Applied Physics, Jg. 87 (2000-03-15), Heft 6, S. 2691-2699
Online
academicJournal
Zugriff:
Discusses a study which analyzed the rapid particle growth by coagulation of particles in silane plasma reactor. Application of plasma chemical vapor deposition, etching and sputtering in semiconductor manufacturing processes; Analysis of the particle growth; Results and discussion; Conclusions.
Titel: |
Modeling of rapid particle growth by coagulation in silane plasma reactor.
|
---|---|
Autor/in / Beteiligte Person: | Kim, Kyo-Seon ; Kim, Dong-Joo |
Link: | |
Zeitschrift: | Journal of Applied Physics, Jg. 87 (2000-03-15), Heft 6, S. 2691-2699 |
Veröffentlichung: | 2000 |
Medientyp: | academicJournal |
ISSN: | 0021-8979 (print) |
DOI: | 10.1063/1.372243 |
Schlagwort: |
|
Sonstiges: |
|