INTERFACIAL EFFECTS ON THE CRYSTALLIZATION TEMPERATURE OF PMN-PT FILMS DEPOSITED ON LNO OR Pt BOTTOM ELECTRODES.
In: Integrated Ferroelectrics, Jg. 98 (2008-03-01), Heft 1, S. 171-182
academicJournal
Zugriff:
PMN-PT (70/30) thin films were deposited by rf magnetron sputtering on silicon substrate. Two types of bottom electrodes were studied: classical TiOx/Pt and LNO. The first one is deposited by sputtering and the LNO by sol gel. Depending on the electrode nature, thickness, ... the diffusion such as oxygen, lead or other species are completely different. PMN-PT annealing temperature were studied in the range of 450 to 700°C; the interface quality is directly related to the annealing temperature. Our study was focused on the bottom electrode/PMN-PT thin films interfaces. We present dielectric and ferroelectric. They are analysed in the view of interfacial layers (nature and thickness), films structure and microstructure. [ABSTRACT FROM AUTHOR]
Titel: |
INTERFACIAL EFFECTS ON THE CRYSTALLIZATION TEMPERATURE OF PMN-PT FILMS DEPOSITED ON LNO OR Pt BOTTOM ELECTRODES.
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Autor/in / Beteiligte Person: | Detalle, M. ; Nguyen, T. T. ; Wang, G. S. ; Remiens, D. |
Zeitschrift: | Integrated Ferroelectrics, Jg. 98 (2008-03-01), Heft 1, S. 171-182 |
Veröffentlichung: | 2008 |
Medientyp: | academicJournal |
ISSN: | 1058-4587 (print) |
DOI: | 10.1080/10584580802093520 |
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