Improved dielectric properties of (110)-preferred (Pb, La) (Zr, Sn, Ti)O<subscript>3</subscript> antiferroelectric thin films on metalorganic decomposition-derived LaNiO<subscript>3</subscript> buffer layer
In: Journal of Crystal Growth, Jg. 311 (2008-12-15), Heft 1, S. 90-94
academicJournal
Zugriff:
Abstract: In the present investigation, LaNiO3 (LNO) perovskite thin films were firstly deposited on Pt(111)/Ti/SiO2/Si substrates through the metalorganic decomposition technique, then (Pb0.97La0.02)(Zr0.87Sn0.10Ti0.03)O3 (PLZST 2/87/10/3) antiferroelectric thin films were subsequently grown on Pt(111)/Ti/SiO2/Si and LNO-buffered Pt(111)/Ti/SiO2/Si substrates via the sol–gel method, respectively. The effect of LNO buffer layer on the microstructure and electrical properties of PLZST 2/87/10/3 antiferroelectric thin films were studied in detail. XRD patterns and SEM pictures indicated that PLZST 2/87/10/3 antiferroelectric thin films grown on LNO buffer layer displayed a (110)-preferred orientation and had a uniform surface structure. The results of dielectric measurements illustrated that PLZST 2/87/10/3 antiferroelectric thin films on LNO-buffered Pt(111)/Ti/SiO2/Si substrates had improved dielectric properties. [Copyright &y& Elsevier]
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Improved dielectric properties of (110)-preferred (Pb, La) (Zr, Sn, Ti)O<subscript>3</subscript> antiferroelectric thin films on metalorganic decomposition-derived LaNiO<subscript>3</subscript> buffer layer
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Autor/in / Beteiligte Person: | Hao, Xihong ; Zhai, Jiwei ; Yao, Xi |
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Zeitschrift: | Journal of Crystal Growth, Jg. 311 (2008-12-15), Heft 1, S. 90-94 |
Veröffentlichung: | 2008 |
Medientyp: | academicJournal |
ISSN: | 0022-0248 (print) |
DOI: | 10.1016/j.jcrysgro.2008.10.010 |
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