Parametrization of energy gap at the Γ point and outside this point for dilute nitrides: Ga<subscript>1-y</subscript>In<subscript>y</subscript>N<subscript>x</subscript>P<subscript>1-x</subscript> and GaN<subscript>x</subscript>As<subscript>1-x-z</subscript>P<subscript>z</subscript> alloys.

The energy gap at the Γ point and outside this point has been analyzed for Ga1-yInyNxP1-x and GaNxAs1-x-zPz alloys (types I and II quaternary dilute nitrides) within the band anticrossing model [Shan et al., Phys. Rev. Lett. 82, 1221 (1999)] using a method which has been proposed in J. Appl. Phys. 101, 023522 (2007). In this method the well known quadratic formula with a bowing parameter, which is used to calculate the band gap energy for N-free ternary alloys A1-yByC (AC1-zDz), is adopted for N-containing quaternary alloys A1-yByNxC1-x (ANxC1-x-zDz). The binary compounds AC and BC (AC and AD) are replaced by appropriate ANC and BNC (ANC and BND) alloys. The energy gap predictions have been compared with available experimental data. A consistent agreement with the experimental data has been achieved when the optical transitions at the Γ point and outside this point were taken into account. [ABSTRACT FROM AUTHOR]