Optically active centers in Si/Si<subscript>1 − x</subscript>Ge<subscript> x</subscript>:Er heterostructures containing Er<superscript>3+</superscript> ions.
In: Semiconductors, Jg. 43 (2009-07-01), Heft 7, S. 877-884
Online
academicJournal
Zugriff:
The basic types of optically active erbium centers that make the major contribution to the photo-luminescence signal from the Si/Si1 − xGe x:Er heterostructures with the Ge content from 10 to 30% are analyzed in detail. It is shown that the origin of the optically active centers containing Er3+ ions correlates with the molar composition of the Si1 − xGe x:Er layer and the content of oxygen impurity in the layer. The major contribution to the photoluminescence signal from the Si/Si1 − xGe x:Er heterostructures with the Ge content below 25% is made by the well-known centers containing Er3+ ions and oxygen. An increase in the Ge content in the Si1 − xGe x:Er layer ( x ≥ 25%) yields the formation of a new type of centers, specifically, the Gecontaining optically active erbium centers unobserved in the Si-based structures previously. [ABSTRACT FROM AUTHOR]
Titel: |
Optically active centers in Si/Si<subscript>1 − x</subscript>Ge<subscript> x</subscript>:Er heterostructures containing Er<superscript>3+</superscript> ions.
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Autor/in / Beteiligte Person: | Krasilnikova, L. V. ; Strepikhova, M. V. ; Baidakova, N. A. ; Drozdov, Yu. N. ; Krasilnik, Z. F. ; Chalkov, V. Yu. ; Shengurov, V. G. |
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Zeitschrift: | Semiconductors, Jg. 43 (2009-07-01), Heft 7, S. 877-884 |
Veröffentlichung: | 2009 |
Medientyp: | academicJournal |
ISSN: | 1063-7826 (print) |
DOI: | 10.1134/S1063782609070094 |
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