Design of a fully CMOS compatible 3-μm size color pixel
In: Microelectronics Reliability, Jg. 50 (2010-02-01), Heft 2, S. 169-173
academicJournal
Zugriff:
Abstract: The Transverse Field Detector (TFD) is a recently proposed CMOS pixel device for color imaging applications without the need of physical color filters. The color detection capability relies on the generation of a suitable electric field configuration in a depleted region of the Silicon active layer. In this paper a newly designed, structurally different version of the TFD is proposed, through which a three-color passive pixel can be implemented with a width reduced to 3μm in a CMOS standard 90nm technology. Experimental results on a prototypal device are also reported. [Copyright &y& Elsevier]
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Design of a fully CMOS compatible 3-μm size color pixel
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Autor/in / Beteiligte Person: | Langfelder, G. |
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Zeitschrift: | Microelectronics Reliability, Jg. 50 (2010-02-01), Heft 2, S. 169-173 |
Veröffentlichung: | 2010 |
Medientyp: | academicJournal |
ISSN: | 0026-2714 (print) |
DOI: | 10.1016/j.microrel.2009.10.008 |
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