Low temperature fabrication of 5–10nm SiO<subscript>2</subscript>/Si structure using advanced nitric acid oxidation of silicon (NAOS) method
In: Applied Surface Science, Jg. 256 (2010-07-01), Heft 18, S. 5610-5613
academicJournal
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Abstract: We have developed the advanced nitric acid oxidation of Si (NAOS) method to form relatively thick (5–10nm) SiO2/Si structure with good electrical characteristics. This method simply involves immersion of Si in 68wt% nitric acid aqueous solutions at 120°C with polysilazane films. Fourier transform infrared absorption (FT-IR) measurements show that the atomic density of the NAOS SiO2 layer is considerably high even without post-oxidation anneal (POA), i.e., 2.28×1022 atoms/cm2, and it increases by POA at 400°C in wet-oxygen (2.32×1022 atoms/cm2) or dry-oxygen (2.30×1022 atoms/cm2). The leakage current density is considerably low (e.g., 10−5 A/cm2 at 8MV/cm) and it is greatly decreased (10−8 A/cm2 at 8MV/cm) by POA at 400°C in wet-oxygen. POA in wet-oxygen increases the atomic density of the SiO2 layer, and decreases the density of oxide fixed positive charges. [Copyright &y& Elsevier]
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Low temperature fabrication of 5–10nm SiO<subscript>2</subscript>/Si structure using advanced nitric acid oxidation of silicon (NAOS) method
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Autor/in / Beteiligte Person: | Fukaya, Yousuke ; Yanase, Takashi ; Kubota, Yasushi ; Imai, Shigeki ; Matsumoto, Taketoshi ; Kobayashi, Hikaru |
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Zeitschrift: | Applied Surface Science, Jg. 256 (2010-07-01), Heft 18, S. 5610-5613 |
Veröffentlichung: | 2010 |
Medientyp: | academicJournal |
ISSN: | 0169-4332 (print) |
DOI: | 10.1016/j.apsusc.2010.03.032 |
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