Intrinsic Capacitance Characteristics of Top-Contact Organic Thin-Film Transistors.
In: IEEE Transactions on Electron Devices, Jg. 57 (2010-09-01), Heft 9, S. 2344-2347
Online
academicJournal
Zugriff:
We present the intrinsic capacitance characteristics of a pentacene-based polystyrene-gate organic thin-film transistor (OTFT). Intrinsic capacitance values (CGD, CGS) at each terminal of the OTFT were experimentally measured for various frequencies and dc bias voltages. The measured results illustrate that the intrinsic capacitance of an OTFT can be understood by considering a charge control mechanism, suggesting the validity of Meyer's capacitance model for the charge storage effect of OTFTs. [ABSTRACT FROM AUTHOR]
Titel: |
Intrinsic Capacitance Characteristics of Top-Contact Organic Thin-Film Transistors.
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Autor/in / Beteiligte Person: | Kim, Kangmin ; Kim, Youngmin |
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Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 57 (2010-09-01), Heft 9, S. 2344-2347 |
Veröffentlichung: | 2010 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) |
DOI: | 10.1109/TED.2010.2055312 |
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