A 65nm CMOS fully-integrated dynamic reconfigurable differential power amplifier with high gain in both bands
In: Microelectronics Journal, Jg. 42 (2011-06-01), Heft 6, S. 855-862
academicJournal
Zugriff:
Abstract: A fully-integrated dual-band dynamic reconfigurable differential power amplifier with high gain in 65nm CMOS is presented. A switchable shunt LC network is proposed to implement the dual-band reconfigurable operation and achieve high gain at both low and high frequency bands, and the high quality on-chip transformers are utilized to implement input/output impedance matching and single-ended to differential conversion. Measured results show that the dual-band dynamic reconfigurable power amplifier can provide 23dB gain at 2.15GHz and 21dB gain at 4.70GHz, and achieve more than 19dBm saturated output power at 2.15GHz and 13dBm saturated output power at 4.70GHz, respectively. The die area is about 1.7mm×2.0mm. [Copyright &y& Elsevier]
Titel: |
A 65nm CMOS fully-integrated dynamic reconfigurable differential power amplifier with high gain in both bands
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Autor/in / Beteiligte Person: | Chi, Baoyong ; Omid-Zohoor, Kasra ; Wang, Zhihua ; Simon Wong, S. |
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Zeitschrift: | Microelectronics Journal, Jg. 42 (2011-06-01), Heft 6, S. 855-862 |
Veröffentlichung: | 2011 |
Medientyp: | academicJournal |
ISSN: | 0026-2692 (print) |
DOI: | 10.1016/j.mejo.2011.04.004 |
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