Silicon-Nanowire-Based CMOS-Compatible Field-Effect Transistor Nanosensors for Ultrasensitive Electrical Detection of Nucleic Acids.
In: Nano Letters, Jg. 11 (2011-09-14), Heft 9, S. 3974-3978
academicJournal
Zugriff:
We herein report the design of a novel semiconducting silicon nanowire field-effect transistor (SiNW-FET) biosensor array for ultrasensitive label-free and real-time detection of nucleic acids. Highly responsive SiNWs with narrow sizes and high surface-to-volume-ratios were âtop-downâ fabricated with a complementary metal oxide semiconductor compatible anisotropic self-stop etching technique. When SiNWs were covalently modified with DNA probes, the nanosensor showed highly sensitive concentration-dependent conductance change in response to specific target DNA sequences. This SiNW-FET nanosensor revealed ultrahigh sensitivity for rapid and reliable detection of 1 fM of target DNA and high specificity single-nucleotide polymorphism discrimination. As a proof-of-concept for multiplex detection with this small-size and mass producible sensor array, we demonstrated simultaneous selective detection of two pathogenic strain virus DNA sequences (H1N1 and H5N1) of avian influenza. [ABSTRACT FROM AUTHOR]
Titel: |
Silicon-Nanowire-Based CMOS-Compatible Field-Effect Transistor Nanosensors for Ultrasensitive Electrical Detection of Nucleic Acids.
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Autor/in / Beteiligte Person: | Gao, Anran ; Lu, Na ; Dai, Pengfei ; Li, Tie ; Pei, Hao ; Gao, Xiuli ; Gong, Yibin ; Wang, Yuelin ; Fan, Chunhai |
Zeitschrift: | Nano Letters, Jg. 11 (2011-09-14), Heft 9, S. 3974-3978 |
Veröffentlichung: | 2011 |
Medientyp: | academicJournal |
ISSN: | 1530-6984 (print) |
DOI: | 10.1021/nl202303y |
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