Passive Circuit Technologies for mm-Wave Wireless Systems on Silicon.
In: IEEE Transactions on Circuits & Systems. Part I: Regular Papers, Jg. 59 (2012-08-01), Heft 8, S. 1680-1693
Online
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Zugriff:
The performance characteristics of transmission lines, silicon integrated waveguides, tunable LC resonators and passive combiners/splitters and baluns are described in this paper. It is shown that Q-factor for an on-chip LC tank peaks between 20 and 40 GHz in a 65 nm RF-CMOS technology; well below the bands proposed for many mm-wave applications. Simulations also predict that the Q-factor of differential CPW transmission lines on-chip can exceed 20 at 60 GHz in RF-CMOS when a floating shield is applied, outperforming unshielded variants employing more advanced metal stacks. A PA circuit demonstrator for advanced on-chip passive power combiners, splitters and baluns realizes peak-PAE of 18% and Psat better than 20 dBm into a 50∼\Omega load at 62 GHz. An outlook to the enablement of digitally intensive mm-wave ICs and low-loss passive interconnections (0.15 dB/mm measured loss at 100 GHz) concludes the paper. [ABSTRACT FROM AUTHOR]
Titel: |
Passive Circuit Technologies for mm-Wave Wireless Systems on Silicon.
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Autor/in / Beteiligte Person: | Long, John R. ; Zhao, Yi ; Wu, Wanghua ; Spirito, Marco ; Vera, Leonardo ; Gordon, Edward |
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Zeitschrift: | IEEE Transactions on Circuits & Systems. Part I: Regular Papers, Jg. 59 (2012-08-01), Heft 8, S. 1680-1693 |
Veröffentlichung: | 2012 |
Medientyp: | serialPeriodical |
ISSN: | 1549-8328 (print) |
DOI: | 10.1109/TCSI.2012.2206499 |
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