Experimental Study of Self-Heating Effects in Trigate Nanowire MOSFETs Considering Device Geometry.
In: IEEE Transactions on Electron Devices, Jg. 59 (2012-12-01), Heft 12, S. 3239-3242
Online
academicJournal
Zugriff:
Temperature rise by self-heating effects in nanowire (NW) transistors (NW Trs.) is systematically studied with respect to their dependence on the structural parameters. Temperature rise in NW Tr. is found to be independent of the NW size in sub-100-nm regions when compared at the same total power consumption. This is because the heat generated by the drain current is spread to the area larger than the NW channel. Dependences of temperature rise on other parameters such as gate oxide or buried oxide thickness suggest that heat dissipates mainly via source/drain or substrate not via the gate electrode. [ABSTRACT FROM AUTHOR]
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Experimental Study of Self-Heating Effects in Trigate Nanowire MOSFETs Considering Device Geometry.
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Autor/in / Beteiligte Person: | Ota, Kensuke ; Saitoh, Masumi ; Tanaka, Chika ; Nakabayashi, Yukio ; Numata, Toshinori |
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Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 59 (2012-12-01), Heft 12, S. 3239-3242 |
Veröffentlichung: | 2012 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) |
DOI: | 10.1109/TED.2012.2218110 |
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