The Effects of Buffers on the Microstructure and Electrical Properties of Mn/Y Co-Doped Ba 0.67 Sr 0.33 TiO 3 Thin Films.
In: Integrated Ferroelectrics, Jg. 140 (2013), Heft 1, S. 132-139
academicJournal
Zugriff:
Mn/Y co-doped Ba0.67Sr0.33TiO3films with different double buffers were prepared by radio-frequency magnetron sputtering. The buffer dependence of the microstructure and electrical properties of the films was investigated. The results show that the thin films deposited on STO/LNO/Pt (111) and LNO/Pt (111) substrates present better crystallization and the film on STO/LNO/Pt (111) exhibit the growth of (100) textured characteristic. The films grown on LaNiO3layer show a stronger dielectric response, while the insertion of STO layer improves dielectric loss and leakage current. STO/LNO Co-buffer is beneficial to the comprehensive electrical properties of the Mn/Y co-doped BST thin film. [ABSTRACT FROM AUTHOR]
Titel: |
The Effects of Buffers on the Microstructure and Electrical Properties of Mn/Y Co-Doped Ba 0.67 Sr 0.33 TiO 3 Thin Films.
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Autor/in / Beteiligte Person: | Chen, X. Y. ; Yang, C. L. ; Zhang, X. S. ; Li, J. ; Liu, H. ; Xiao, D. Q. ; Yu, P. |
Zeitschrift: | Integrated Ferroelectrics, Jg. 140 (2013), Heft 1, S. 132-139 |
Veröffentlichung: | 2013 |
Medientyp: | academicJournal |
ISSN: | 1058-4587 (print) |
DOI: | 10.1080/10584587.2012.741504 |
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