Temperature-dependent growth and properties of W-doped ZnO thin films deposited by reactive magnetron sputtering.
In: Applied Surface Science, Jg. 274 (2013-06-01), S. 371-377
academicJournal
Zugriff:
Highlights: [•] W-doped ZnO (WZO) films were deposited by reactive magnetron sputtering. [•] Substrate temperatures have key influences on the properties of WZO films. [•] Low sheet resistance and high transmittance were obtained at 300°C. [•] W element exists only in the oxidized state of W6+ in WZO thin films. [•] WZO films are promising TCO layers for solar cells. [ABSTRACT FROM AUTHOR]
Titel: |
Temperature-dependent growth and properties of W-doped ZnO thin films deposited by reactive magnetron sputtering.
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Autor/in / Beteiligte Person: | Zhang, Chi ; Chen, Xin-liang ; Geng, Xin-hua ; Tian, Cong-sheng ; Huang, Qian ; Zhao, Ying ; Zhang, Xiao-dan |
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Zeitschrift: | Applied Surface Science, Jg. 274 (2013-06-01), S. 371-377 |
Veröffentlichung: | 2013 |
Medientyp: | academicJournal |
ISSN: | 0169-4332 (print) |
DOI: | 10.1016/j.apsusc.2013.03.069 |
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