Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process.
In: IEEE Transactions on Nuclear Science, Jg. 61 (2014-12-01), Heft 6, S. 3037-3042
Online
academicJournal
Zugriff:
Titel: |
Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process.
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Autor/in / Beteiligte Person: | Haeffner, T. D. ; Loveless, T. D. ; Zhang, E. X. ; Sternberg, A. L. ; Jagannathan, S. ; Schrimpf, R. D. ; Kauppila, J. S. ; Alles, M. L. ; Fleetwood, D. M. ; Massengill, L. W. ; Haddad, N. F. |
Link: | |
Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 61 (2014-12-01), Heft 6, S. 3037-3042 |
Veröffentlichung: | 2014 |
Medientyp: | academicJournal |
ISSN: | 0018-9499 (print) |
DOI: | 10.1109/TNS.2014.2360455 |
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