Experimental Characterization and Simulation of Electron-Induced SEU in 45-nm CMOS Technology.
In: IEEE Transactions on Nuclear Science, Jg. 61 (2014-12-01), Heft 6, S. 3055-3060
Online
academicJournal
Zugriff:
Titel: |
Experimental Characterization and Simulation of Electron-Induced SEU in 45-nm CMOS Technology.
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Autor/in / Beteiligte Person: | Samaras, A. ; Pourrouquet, P. ; Sukhaseum, N. ; Gouyet, L. ; Vandevelde, B. ; Chatry, N. ; Ecoffet, R. ; Bezerra, F. ; Lorfevre, E. |
Link: | |
Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 61 (2014-12-01), Heft 6, S. 3055-3060 |
Veröffentlichung: | 2014 |
Medientyp: | academicJournal |
ISSN: | 0018-9499 (print) |
DOI: | 10.1109/TNS.2014.2367544 |
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