Temperature-Compensated MOS Dosimeter Fully Integrated in a High-Voltage 0.35 μm CMOS Process.
In: IEEE Transactions on Nuclear Science, Jg. 67 (2020-06-01), Heft 6, S. 1118-1124
Online
academicJournal
Zugriff:
Titel: |
Temperature-Compensated MOS Dosimeter Fully Integrated in a High-Voltage 0.35 μm CMOS Process.
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Autor/in / Beteiligte Person: | Carbonetto, Sebastian ; Echarri, Martin ; Lipovetzky, Jose ; Garcia-Inza, Mariano ; Faigon, Adrian |
Link: | |
Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 67 (2020-06-01), Heft 6, S. 1118-1124 |
Veröffentlichung: | 2020 |
Medientyp: | academicJournal |
ISSN: | 0018-9499 (print) |
DOI: | 10.1109/TNS.2020.2966567 |
Sonstiges: |
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