Design and Experimentation of Inductorless Low-Pass NGD Integrated Circuit in 180-nm CMOS Technology.
In: IEEE Transactions on Computer-Aided Design of Integrated Circuits & Systems, Jg. 41 (2022-11-01), Heft 11, S. 4965-4974
Online
academicJournal
Zugriff:
Titel: |
Design and Experimentation of Inductorless Low-Pass NGD Integrated Circuit in 180-nm CMOS Technology.
|
---|---|
Autor/in / Beteiligte Person: | Wan, Fayu ; Gu, Taochen ; Li, Binhong ; Li, Bo ; Rahajandraibe, Wenceslas ; Guerin, Mathieu ; Lallechere, Sebastien ; Ravelo, Blaise |
Link: | |
Zeitschrift: | IEEE Transactions on Computer-Aided Design of Integrated Circuits & Systems, Jg. 41 (2022-11-01), Heft 11, S. 4965-4974 |
Veröffentlichung: | 2022 |
Medientyp: | academicJournal |
ISSN: | 0278-0070 (print) |
DOI: | 10.1109/TCAD.2021.3136982 |
Sonstiges: |
|