Radiation Hardened by Design RF Circuits Implemented in 0.13 μm CMOS Technology.
In: IEEE Transactions on Nuclear Science, Jg. 53 (2006-12-01), Heft 6, S. 3449-3454
Online
academicJournal
Zugriff:
Titel: |
Radiation Hardened by Design RF Circuits Implemented in 0.13 μm CMOS Technology.
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Autor/in / Beteiligte Person: | Chen, W. ; Pouget, V. ; Gentry, G. K. ; Barnaby, H. J. ; Vermeire, B. ; Bakkaloglu, B. ; Kiaei, S. ; Holbert, K. E. ; Fouillat, P. |
Link: | |
Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 53 (2006-12-01), Heft 6, S. 3449-3454 |
Veröffentlichung: | 2006 |
Medientyp: | academicJournal |
ISSN: | 0018-9499 (print) |
DOI: | 10.1109/TNS.2006.885009 |
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