Influence of Block Oxide Width on a Silicon-on-Partial-Insulator Field-Effect Transistor.
In: IEEE Transactions on Electron Devices, Jg. 54 (2007-11-01), Heft 11, S. 2893-2900
Online
academicJournal
Zugriff:
Titel: |
Influence of Block Oxide Width on a Silicon-on-Partial-Insulator Field-Effect Transistor.
|
---|---|
Autor/in / Beteiligte Person: | Lin, Jyi-Tsong ; Eng, Yi-Chuen |
Link: | |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 54 (2007-11-01), Heft 11, S. 2893-2900 |
Veröffentlichung: | 2007 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) |
DOI: | 10.1109/TED.2007.906925 |
Sonstiges: |
|