Effects of Random Dopant Fluctuations (RDF) on the Single Event Vulnerability of 90 and 65 nm CMOS Technologies.
In: IEEE Transactions on Nuclear Science, Jg. 54 (2007-12-01), Heft 6, S. 2400-2406
Online
academicJournal
Zugriff:
Titel: |
Effects of Random Dopant Fluctuations (RDF) on the Single Event Vulnerability of 90 and 65 nm CMOS Technologies.
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Autor/in / Beteiligte Person: | Balasubramanian, A. ; Fleming, P. R. ; Bhuva, B. L. ; Amusan, O. A. ; Massengill, L. W. |
Link: | |
Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 54 (2007-12-01), Heft 6, S. 2400-2406 |
Veröffentlichung: | 2007 |
Medientyp: | academicJournal |
ISSN: | 0018-9499 (print) |
DOI: | 10.1109/TNS.2007.908167 |
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