A New NBTI Model Based on Hole Trapping and Structural Relaxation in MOS Dielectrics.
In: IEEE Transactions on Electron Devices, Jg. 56 (2009-09-01), Heft 9, S. 1943-1952
Online
academicJournal
Zugriff:
Titel: |
A New NBTI Model Based on Hole Trapping and Structural Relaxation in MOS Dielectrics.
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Autor/in / Beteiligte Person: | Ielmini, Daniele ; Manigrasso, Mariaflavia ; Gattel, Francesco ; Valentini, Maria Grazia |
Link: | |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 56 (2009-09-01), Heft 9, S. 1943-1952 |
Veröffentlichung: | 2009 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) |
DOI: | 10.1109/TED.2009.2026389 |
Sonstiges: |
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