A low-power high-sensitivity CMOS mixed-signal seizure-onset detector.
In: Annual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE Engineering in Medicine and Biology Society. Annual International Conference, Jg. 2011 (2011), S. 5847-50
academicJournal
Zugriff:
In this paper, we present a new seizure detection algorithm and the associated CMOS circuitry implementation. The proposed low-power seizure detector is a good candidate for an implantable epilepsy prosthesis. The device is designed for patient-specific seizure detection with a one variable parameter. The parameter value is extracted from a single seizure that is subsequently excluded from the validation phase. A two-path system is also proposed to minimize the detection delay. The algorithm is first validated using MATLAB® tools and then implemented and validated using circuits designed in a standard 0.18-μm CMOS process with a total power dissipation of 7.08 μW. A total of 13 seizures from two drug-resistant epileptic patients are assessed using the proposed algorithm and resulted in 100% sensitivity and a mean detection delay of 9.7 s after electrical onset.
Titel: |
A low-power high-sensitivity CMOS mixed-signal seizure-onset detector.
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Autor/in / Beteiligte Person: | Safi-Harb, M ; Salam, MT ; Mirabbasi, S ; Nguyen, DK ; Sawan, M |
Zeitschrift: | Annual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE Engineering in Medicine and Biology Society. Annual International Conference, Jg. 2011 (2011), S. 5847-50 |
Veröffentlichung: | [Piscataway, NJ] : [IEEE], [2007]-, 2011 |
Medientyp: | academicJournal |
ISSN: | 2694-0604 (electronic) |
DOI: | 10.1109/IEMBS.2011.6091446 |
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