Uncooled CMOS terahertz imager using a metamaterial absorber and pn diode.
In: Optics letters, Jg. 41 (2016-07-15), Heft 14, S. 3261-4
academicJournal
Zugriff:
We demonstrate a low-cost uncooled terahertz (THz) imager fabricated in a standard 180 nm CMOS process. The imager is composed of a broadband THz metamaterial absorber coupled with a diode microbolometer sensor where the pn junction is used as a temperature sensitive device. The metamaterial absorber array is integrated in the top metallic layers of a six metal layer process allowing for complete monolithic integration of the metamaterial absorber and sensor. We demonstrate the capability of the detector for stand-off imaging applications by using it to form transmission and reflection images of a metallic object hidden in a manila envelope.
Titel: |
Uncooled CMOS terahertz imager using a metamaterial absorber and pn diode.
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Autor/in / Beteiligte Person: | Escorcia, I ; Grant, J ; Gough, J ; Cumming, DR |
Zeitschrift: | Optics letters, Jg. 41 (2016-07-15), Heft 14, S. 3261-4 |
Veröffentlichung: | Washington, DC : Optica Publishing Group ; <i>Original Publication</i>: New York, Optical Society of America., 2016 |
Medientyp: | academicJournal |
ISSN: | 1539-4794 (electronic) |
DOI: | 10.1364/OL.41.003261 |
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