GeSnOI mid-infrared laser technology.
In: Light, science & applications, Jg. 10 (2021-11-17), Heft 1, S. 232
Online
academicJournal
Zugriff:
GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management, all of which are poorly discussed in the literature. Herein, a specific GeSn-on-insulator (GeSnOI) stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-IV semiconductor lasers on a versatile photonic platform for the near- and mid-infrared spectral range. Microdisk-shape resonators on mesa structures were fabricated from GeSnOI, after bonding a Ge 0.9 Sn 0.1 alloy layer grown on a Ge strain-relaxed-buffer, itself on a Si(001) substrate. The GeSnOI microdisk mesas exhibited significantly improved optical gain as compared to that of conventional suspended microdisk resonators formed from the as-grown layer. We further show enhanced vertical out-coupling of the disk whispering gallery mode in-plane radiation, with up to 30% vertical out-coupling efficiency. As a result, the GeSnOI approach can be a valuable asset in the development of silicon-based mid-infrared photonics that combine integrated sources in a photonic platform with complex lightwave engineering.
(© 2021. The Author(s).)
Titel: |
GeSnOI mid-infrared laser technology.
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Autor/in / Beteiligte Person: | Wang, B ; Sakat, E ; Herth, E ; Gromovyi, M ; Bjelajac, A ; Chaste, J ; Patriarche, G ; Boucaud, P ; Boeuf, F ; Pauc, N ; Calvo, V ; Chrétien, J ; Frauenrath, M ; Chelnokov, A ; Reboud, V ; Hartmann, JM ; El Kurdi, M |
Link: | |
Zeitschrift: | Light, science & applications, Jg. 10 (2021-11-17), Heft 1, S. 232 |
Veröffentlichung: | [London] : Springer Nature, [2012]-, 2021 |
Medientyp: | academicJournal |
ISSN: | 2047-7538 (electronic) |
DOI: | 10.1038/s41377-021-00675-7 |
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