High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown n-MoS <subscript>2</subscript> and p-MoTe <subscript>2</subscript> .

In this work, monolithic three-dimensional complementary metal oxide semiconductor (CMOS) inverter array has been fabricated, based on large-scale n-MoS 2 and p-MoTe 2 grown by the chemical vapor deposition method. In the CMOS device, the n- and p-channel field-effect transistors (FETs) stack vertically and share the same gate electrode. High k HfO 2 is used as the gate dielectric. An Al 2 O 3 seed layer is used to protect the MoS 2 from heavily n-doping in the later-on atomic layer deposition process. P-MoTe 2 FET is intentionally designed as the upper layer. Because p-doping of MoTe 2 results from oxygen and water in the air, this design can guarantee a higher hole density of MoTe 2 . An HfO 2 capping layer is employed to further balance the transfer curves of n- and p-channel FETs and improve the performance of the inverter. The typical gain and power consumption of the CMOS devices are about 4.2 and 0.11 nW, respectively, at V DD of 1 V. The statistical results show that the CMOS array is with high device yield (60%) and an average voltage gain value of about 3.6 at V DD of 1 V. This work demonstrates the advantage of two-dimensional semi-conductive transition metal dichalcogenides in fabricating high-density integrated circuits.

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