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Molybdenum disulfide (MoS 2 ), a metal dichalcogenide, is a promising channel material for highly integrated scalable transistors. However, intrinsic donor defect states, such as sulfur vacancies (V s ), can degrade the channel properties and lead to undesired n-doping. A method for healing the donor defect states in monolayer MoS 2 is proposed using oxygen plasma, with an aluminum oxide (Al 2 O 3 ) barrier layer that protects the MoS 2 channel from damage by plasma treatment. Successful healing of donor defect states in MoS 2 by oxygen atoms, even in the presence of an Al 2 O 3 barrier layer, is confirmed by X-ray photoelectron spectroscopy, photoluminescence, and Raman spectroscopy. Despite the decrease in 2D sheet carrier concentration (Δn 2D = -3.82×10 12 cm -2 ), the proposed approach increases the on-current and mobility by 18% and 44% under optimal conditions, respectively. Metal-insulator transition occurs at electron concentrations of 5.7×10 12 cm -2 and reflects improved channel quality. Finally, the activation energy (E a ) reduces at all the gate voltages (V G ) owing to a decrease in V s , which act as a localized state after the oxygen plasma treatment. This study demonstrates the feasibility of plasma-assisted healing of defects in 2D materials and electrical property enhancement and paves the way for the development of next-generation electronic devices.

Titel:	Healing Donor Defect States in CVD-Grown MoS <subscript>2</subscript> Field-Effect Transistors Using Oxygen Plasma with a Channel-Protecting Barrier.
Autor/in / Beteiligte Person:	Lee, I ; Kang, M ; Park, S ; Park, C ; Lee, H ; Bae, S ; Lim, H ; Kim, S ; Hong, W ; Choi, SY
Link:	Full Text Finder (Volltext)
Zeitschrift:	Small (Weinheim an der Bergstrasse, Germany), Jg. 20 (2024), Heft 2, S. e2305143
Veröffentlichung:	Weinheim, Germany : Wiley-VCH, c2005-, 2024
Medientyp:	academicJournal
ISSN:	1613-6829 (electronic)
DOI:	10.1002/smll.202305143
Sonstiges:	Nachgewiesen in: MEDLINE Sprachen: English Publication Type: Journal Article Language: English [Small] 2024 Jan; Vol. 20 (2), pp. e2305143. <i>Date of Electronic Publication: </i>2023 Sep 05. References: Y. Wang, J. C. Kim, R. J. Wu, J. Martinez, X. Song, J. Yang, F. Zhao, A. Mkhoyan, H. Y. Jeong, M. Chhowalla, Nature 2019, 568, 70. ; M. Chhowalla, D. Jena, H. Zhang, Nat. Rev. Mater. 2016, 1, 16052. ; H. Schmidt, F. Giustiniano, G. Eda, Chem. Soc. Rev. 2015, 44, 7715. ; H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. Castro Neto, J. Martin, S. Adam, B. Özyilmaz, Nano Lett. 2014, 14, 1909. ; J. Hong, Z. Hu, M. Probert, K. Li, D. Lv, X. Yang, L. Gu, N. Mao, Q. Feng, L. Xie, Nat. Commun. 2015, 6, 6293. ; K. Cho, M. Min, T.-Y. Kim, H. Jeong, J. Pak, J.-K. Kim, J. Jang, S. J. Yun, Y. H. Lee, W.-K. Hong, ACS Nano 2015, 9, 8044. ; M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, Science 2015, 350, 1065. ; D. H. Kang, M. S. Kim, J. Shim, J. Jeon, H. Y. Park, W. S. Jung, H. Y. Yu, C. H. Pang, S. Lee, J. H. Park, Adv. Funct. Mater. 2015, 25, 4219. ; Z. Yu, Y. Pan, Y. Shen, Z. Wang, Z.-Y. Ong, T. Xu, R. Xin, L. Pan, B. Wang, L. Sun, Nat. Commun. 2014, 5, 5290. ; H. Qiu, T. Xu, Z. Wang, W. Ren, H. Nan, Z. Ni, Q. Chen, S. Yuan, F. Miao, F. Song, Nat. Commun. 2013, 4, 2642. ; Z. Yu, Z. Y. Ong, S. Li, J. B. Xu, G. Zhang, Y. W. Zhang, Y. Shi, X. Wang, Adv. Funct. Mater. 2017, 27, 1604093. ; D. M. Sim, M. Kim, S. Yim, M.-J. Choi, J. Choi, S. Yoo, Y. S. Jung, ACS Nano 2015, 9, 12115. ; X. Zhang, Q. Liao, S. Liu, Z. Kang, Z. Zhang, J. Du, F. Li, S. Zhang, J. Xiao, B. Liu, Nat. Commun. 2017, 8, 15881. ; S. Kc, R. C. Longo, R. M. Wallace, K. Cho, J Appl Phys 2015, 117, 135301. ; H. Lu, A. Kummel, J. Robertson, APL Mater. 2018, 6, 066104. ; A. T. Neal, R. Pachter, S. Mou, Appl. Phys. Lett. 2017, 110, 193103. ; S. Wang, X. Zeng, Y. Zhou, J. Lu, Y. Hu, W. Wang, J. Wang, Y. Xiao, X. Wang, D. Chen, ACS Appl. Electron. Mater. 2022, 4, 955. ; J. Jadwiszczak, D. J. Kelly, J. Guo, Y. Zhou, H. Zhang, ACS Appl. Electron. Mater. 2021, 3, 1505. ; S. Kim, M. S. Choi, D. Qu, C. H. Ra, X. Liu, M. Kim, Y. J. Song, W. J. Yoo, 2D Mater. 2016, 3, 035002. ; H. Liu, K. Xu, X. Zhang, P. D. Ye, Appl. Phys. Lett. 2012, 100, 152115. ; H. Liu, D. Y. Peide, IEEE Electron Device Lett. 2012, 33, 546. ; H. Jung, H. Jeon, H. Choi, G. Ham, S. Shin, H. Jeon, J. Appl. Phys. 2014, 115. ; B. Chakraborty, A. Bera, D. Muthu, S. Bhowmick, U. V. Waghmare, A. Sood, Phys. Rev. B 2012, 85, 161403. ; N. Mao, Y. Chen, D. Liu, J. Zhang, L. Xie, Small 2013, 9, 1312. ; I. S. Kim, V. K. Sangwan, D. Jariwala, J. D. Wood, S. Park, K.-S. Chen, F. Shi, F. Ruiz-Zepeda, A. Ponce, M. Jose-Yacaman, ACS Nano 2014, 8, 10551. ; N. M. Brown, N. Cui, A. McKinley, Appl. Surf. Sci. 1998, 134, 11. ; H. Nan, Z. Wang, W. Wang, Z. Liang, Y. Lu, Q. Chen, D. He, P. Tan, F. Miao, X. Wang, ACS Nano 2014, 8, 5738. ; H. C. Diaz, R. Addou, M. Batzill, Nanoscale 2014, 6, 1071. ; C. Rice, R. Young, R. Zan, U. Bangert, D. Wolverson, T. Georgiou, R. Jalil, K. Novoselov, Phys. Rev. B 2013, 87, 081307. ; A. Michail, N. Delikoukos, J. Parthenios, C. Galiotis, K. Papagelis, Appl. Phys. Lett. 2016, 108, 173102. ; D. Rai, T. V. Vu, A. Laref, M. Ghimire, P. Patra, S. Srivastava, Nano-Struct. Nano-Objects 2020, 21, 100404. ; K. F. Mak, K. He, C. Lee, G. H. Lee, J. Hone, T. F. Heinz, J. Shan, Nat. Mater. 2013, 12, 207. ; S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, Sci. Rep. 2013, 3, 2657. ; T. Verhagen, V. L. Guerra, G. Haider, M. Kalbac, J. Vejpravova, Nanoscale 2020, 12, 3019. ; S. Yim, D. M. Sim, W. I. Park, M. J. Choi, J. Choi, J. Jeon, K. H. Kim, Y. S. Jung, Adv. Funct. Mater. 2016, 26, 5631. ; M. Takenaka, Y. Ozawa, J. Han, S. Takagi, in 2016 IEEE Int. Electron Devices Meeting (IEDM), IEEE, Piscataway, NJ 2016, pp. 5-8. ; B. Radisavljevic, A. Kis, Nat. Mater. 2013, 12, 815. ; S. Kim, A. Konar, W.-S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J.-B. Yoo, J.-Y. Choi, Nat. Commun. 2012, 3, 1011. ; Z. Yu, Z. Y. Ong, Y. Pan, Y. Cui, R. Xin, Y. Shi, B. Wang, Y. Wu, T. Chen, Y. W. Zhang, Adv. Mater. 2016, 28, 547. ; S. Bhattacharjee, K. L. Ganapathi, H. Chandrasekar, T. Paul, S. Mohan, A. Ghosh, S. Raghavan, N. Bhat, Adv. Electron. Mater. 2017, 3, 1600358. ; P.-T. Liu, C.-H. Chang, C.-S. Fuh, RSC Adv. 2016, 6, 106374. Grant Information: NRF-2022R1A2B5B0200218912 National Research Foundation of Korea; NRF-2021-0-00269 National Research Foundation of Korea; LG Display Inc Contributed Indexing: Keywords: metal insulator transition; molybdenum disulfide; oxygen plasma; sulfur vacancies; transition metal dichalcogenides Entry Date(s): Date Created: 20230905 Latest Revision: 20240111 Update Code: 20240111

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Healing Donor Defect States in CVD-Grown MoS <subscript>2</subscript> Field-Effect Transistors Using Oxygen Plasma with a Channel-Protecting Barrier.