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Hafnia-based ferroelectrics have gained much attention because they can be used in highly scaled, advanced complementary metal-oxide semiconductor (CMOS) memory devices. However, thermal stability should be considered when integrating hafnia-based ferroelectric transistors in advanced CMOS devices, as they can be exposed to high-temperature processes. This work proposed that doping of Al in hafnia-based ferroelectric material can lead to high thermal stability. A ferroelectric capacitor based on Al-doped hafnia, which can be used for one-transistor-one-capacitor applications, exhibits stable operation even after annealing at 900 °C. Moreover, it demonstrates that the ferroelectric transistors based on Al-doped hafnia for one-transistor applications, such as ferroelectric NAND, retain their memory states for 10 years at 100 °C. This study presents a practical method to achieve thermally stable ferroelectric memories capable of enduring high-temperature processes and operation conditions.

Titel:	Dopant Engineering of Hafnia-Based Ferroelectrics for Long Data Retention and High Thermal Stability.
Autor/in / Beteiligte Person:	Kim, IJ ; Lee, JS
Link:	Full Text Finder (Volltext)
Zeitschrift:	Small (Weinheim an der Bergstrasse, Germany), Jg. 20 (2024-03-01), Heft 13, S. e2306871
Veröffentlichung:	Weinheim, Germany : Wiley-VCH, c2005-, 2024
Medientyp:	academicJournal
ISSN:	1613-6829 (electronic)
DOI:	10.1002/smll.202306871
Sonstiges:	Nachgewiesen in: MEDLINE Sprachen: English Publication Type: Journal Article Language: English [Small] 2024 Mar; Vol. 20 (13), pp. e2306871. <i>Date of Electronic Publication: </i>2023 Nov 15. References: L. Brunet, P. Batude, C. Fenouillet‐Beranger, P. Besombes, L. Hortemel, F. Ponthenier, B. Previtali, C. Tabone, A. Royer, C. Agraffeil, C. Euvrard‐Colnat, A. Seignard, C. Morales, F. Fournel, L. Benaissa, T. Signamarcheix, P. Besson, M. Jourdan, R. Kachtouli, V. Benevent, J. M. Hartmann, C. Comboroure, N. Allouti, N. Posseme, C. Vizioz, C. Arvet, S. Barnola, S. Kerdiles, L. Baud, L. Pasini, et al., presented at 2016 IEEE Symp. on VLSI Technology, IEEE, New York 2016, 14. ; T. S. Böscke, J. Müller, D. Bräuhaus, U. Schröder, U. Böttger, Appl. Phys. Lett. 2011, 99, 102903. ; A. I. Khan, A. Keshavarzi, S. Datta, Nat. Electron. 2020, 3, 588. ; I.‐J. Kim, J.‐S. Lee, Adv. Mater. 2023, 35, 2206864. ; M.‐K. Kim, I.‐J. Kim, J.‐S. Lee, Sci. Adv. 2021, 7, eabe1341. ; I.‐J. Kim, M.‐K. 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Dopant Engineering of Hafnia-Based Ferroelectrics for Long Data Retention and High Thermal Stability.