A 128-Stage CMOS TDI Image Sensor With On-Chip Digital Accumulator.
In: IEEE Sensors Journal, Jg. 16 (2016-03-01), Heft 5, S. 1319-1324
Online
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Zugriff:
A 128-stage CMOS time delay integration (TDI) image sensor with on-chip digital accumulator was presented in this paper. By using two sets of sampling capacitors and an optimized timing, the on-chip column parallel cyclic analog-to-digital converter (ADC) in the sensor conducts the correlated double sampling, digital program gain amplifying, and A/D conversion all altogether in one ADC’s conversion time simultaneously. An on-chip digital accumulator suitable for this sensor is also proposed. A prototype 1024 \times 128 CMOS TDI image sensor is fabricated in the 0.18- \mu \text{m} CMOS technology, and the measurement results proof that the pixels and readout circuits in the sensor work properly. With a line rate of 3875 lines/s, the sensor costs a power consumption of 290 mW and a silicon area of 18.2~\textrm {mm}\times 18.9$ mm. The estimated maximum sensitivity of the fabricated sensor is 2010 \textrm {V}/\textrm {lux}\cdot \textrm {sec} . This paper is suitable for applications in low-illumination, high scanning speed, and remote sensing systems. [ABSTRACT FROM PUBLISHER]
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Titel: |
A 128-Stage CMOS TDI Image Sensor With On-Chip Digital Accumulator.
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Autor/in / Beteiligte Person: | Nie, Kaiming ; Xu, Jiangtao ; Gao, Zhiyuan |
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Zeitschrift: | IEEE Sensors Journal, Jg. 16 (2016-03-01), Heft 5, S. 1319-1324 |
Veröffentlichung: | 2016 |
Medientyp: | academicJournal |
ISSN: | 1530-437X (print) |
DOI: | 10.1109/JSEN.2015.2499743 |
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