A Low Power Energy-Efficient Precision CMOS Temperature Sensor †.
In: Micromachines, Jg. 9 (2018-06-01), Heft 6, S. 257-257
Online
academicJournal
Zugriff:
This paper presents a low power, energy-efficient precision CMOS temperature sensor. The front-end circuit is based on bipolar junction transistors, and employs a pre-bias circuit and bipolar core. To reduce measurement errors arising from current ratio mismatch, a new dynamic element-matching mode is proposed, which dynamically matches all current sources in the front-end circuit. The first-order fitting and third-order fitting are used to calibrate the output results. On the basis of simulation results, the sensor achieves 3σ-inaccuracies of +0.18/−0.13 °C from −55 °C to +125 °C. Measurement results demonstrate sensor 3σ-inaccuracies of ±0.2 °C from 0 °C to +100 °C. The circuit is implemented in 0.18 μm CMOS, and consumes 6.1 μA with a 1.8 V supply voltage. [ABSTRACT FROM AUTHOR]
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Titel: |
A Low Power Energy-Efficient Precision CMOS Temperature Sensor †.
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Autor/in / Beteiligte Person: | Wei, Rongshan ; Bao, Xiaotian |
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Zeitschrift: | Micromachines, Jg. 9 (2018-06-01), Heft 6, S. 257-257 |
Veröffentlichung: | 2018 |
Medientyp: | academicJournal |
ISSN: | 2072-666X (print) |
DOI: | 10.3390/mi9060257 |
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