Quantification of the Contact Resistance of ZnO/MoSe<subscript>2</subscript>/Mo Contact Formed in a Monolithic CIGS Photovoltaic Module.
In: Electronic Materials Letters, Jg. 17 (2021-09-01), Heft 5, S. 421-426
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Zugriff:
This study investigated the effect of MoSe 2 on the contact resistance (R C ) of the transparent conducting oxide (TCO) and Mo contact in the P2 region of the CIGS photovoltaic module. MoSe 2 formed in the process of making the Cu(In,Ga)Se 2 (CIGS) absorber layer imparts ohmic contact properties to the CIGS/Mo contact. In the process of connecting cells in series to fabricate a CIGS photovoltaic module, TCO/MoSe 2 /Mo contact was formed, and it was confirmed that MoSe 2 increased the R C of this contact using the transmission line method. It is estimated that the reason MoSe 2 increases the R C is due to conduction band offset (CBO). When ZnO used as TCO forms a contact with MoSe 2 , 0.6 eV CBO is formed due to the difference in electron affinity. This CBO can act as a resistor that impedes the flow of current. Therefore, in order to reduce the contact resistance of the CIGS solar module and increase the power conversion efficiency, it is necessary to make the MoSe 2 thin enough to facilitate carrier tunneling. [ABSTRACT FROM AUTHOR]
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Titel: |
Quantification of the Contact Resistance of ZnO/MoSe<subscript>2</subscript>/Mo Contact Formed in a Monolithic CIGS Photovoltaic Module.
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Autor/in / Beteiligte Person: | Cho, Sung-Wook ; Kim, A.-Hyun ; Lee, Gyeong A. ; Jeon, Chan-Wook |
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Zeitschrift: | Electronic Materials Letters, Jg. 17 (2021-09-01), Heft 5, S. 421-426 |
Veröffentlichung: | 2021 |
Medientyp: | academicJournal |
ISSN: | 1738-8090 (print) |
DOI: | 10.1007/s13391-021-00294-9 |
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