A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage.
In: Micromachines, Jg. 13 (2022), Heft 1, S. 47-47
Online
academicJournal
Zugriff:
Silicon avalanche photodetector (APD) plays a very important role in near-infrared light detection due to its linear controllable gain and attractive manufacturing cost. In this paper, a silicon APD with punch-through structure is designed and fabricated by standard 0.5 μm complementary metal oxide semiconductor (CMOS) technology. The proposed structure eliminates the requirements for wafer-thinning and the double-side metallization process by most commercial Si APD products. The fabricated device shows very low level dark current of several tens Picoamperes and ultra-high multiplication gain of ~4600 at near-infrared wavelength. The ultra-low extracted temperature coefficient of the breakdown voltage is 0.077 V/K. The high performance provides a promising solution for near-infrared weak light detection. [ABSTRACT FROM AUTHOR]
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Titel: |
A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage.
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Autor/in / Beteiligte Person: | Liu, Daoqun ; Li, Tingting ; Tang, Bo ; Zhang, Peng ; Wang, Wenwu ; Liu, Manwen ; Li, Zhihua |
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Zeitschrift: | Micromachines, Jg. 13 (2022), Heft 1, S. 47-47 |
Veröffentlichung: | 2022 |
Medientyp: | academicJournal |
ISSN: | 2072-666X (print) |
DOI: | 10.3390/mi13010047 |
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