Non arrhenius magnetotransport and spin accumulation in CuAlTe<subscript>2</subscript>.
In: AIP Conference Proceedings; 2024, Vol. 2995 Issue 1, p1-4, 4p; Jg. 2995 (2024-01-08) 1, S. 1-4
Konferenz
Zugriff:
CuAlTe 2 is a solid with considerable crystal field energy and feeble spin orbit coupling, with the possibility of strong spin accumulation due to local interactions. In this work, we investigate low temperature magneto transport in CuAlTe 2 and spin accumulation strength in it with energetics, at low magnetic fields. CuAlTe 2 was synthesized using vacuum melt growth technique. The formed compound was subjected to structural, morphological and compositional analysis. The crystal structure of the formed solid was tetragonal. The magnetotransport studies were carried out from 10 K to 300 K. The magnetoresistance (MR) at the room temperature was positive and of the order of 1.5 % indicating paramagnetic interaction. At 10 K the MR was negative, indicating strong spin dependent scattering. The AC-MR showed a similar response with enhanced effect, giving 10 % MR at 1 kHz and 1 kOe magnetic field, which inferred increased spin accumulation. A Coulomb gap was observed in CuAlTe 2 from 15 K to 50 K associated with formation of charge density waves (CDWs) and a confined low dimensional charge transport. The DC resistivity variation was subjected to Arrhenius analysis which indicated a strong phonon intervention in charge and spin transport with dynamic activation energy of 0.3 keV to 0.5 keV with power of 10 in Coulomb-block region. These findings are useful in developing CDW based AC spintronic devices. [ABSTRACT FROM AUTHOR]
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Titel: |
Non arrhenius magnetotransport and spin accumulation in CuAlTe<subscript>2</subscript>.
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Autor/in / Beteiligte Person: | Pallavi, B. N. ; Swetha, A. K. ; Jaldar, Rajashree ; Joshi, Rajeev S. ; Reddy, C. Vishnuvardhan ; Hegde, B. G. |
Quelle: | AIP Conference Proceedings; 2024, Vol. 2995 Issue 1, p1-4, 4p; Jg. 2995 (2024-01-08) 1, S. 1-4 |
Veröffentlichung: | 2024 |
Medientyp: | Konferenz |
ISSN: | 0094-243X (print) |
DOI: | 10.1063/5.0178232 |
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