A Multi-Domain Magneto Tunnel Junction for Racetrack Nanowire Strips.
In: IEEE Transactions on Nanotechnology, Jg. 22 (2023-07-01), S. 581-583
Online
academicJournal
Zugriff:
Domain-wall memory (DWM) has SRAM class access performance, low energy, high endurance, high density, and CMOS compatibility. Recently, shift reliability and processing-using-memory (PuM) proposals developed a need to count the number of parallel or anti-parallel domains in a portion of the DWM nanowire. In this article we propose a multi-domain magneto-tunnel junction (MTJ) that can detect different resistance levels as a function of a the number of parallel or anti-parallel domains. Using detailed micromagnetic simulation with LLG, we demonstrate the multi-domain MTJ, study the benefit of its macro-size on resilience to process variation and present a macro-model for scaling the size of the multi-domain MTJ. Our results indicate scalability to seven-domains while maintaining a $16.3 \,\text{mV}$ sense margin. [ABSTRACT FROM AUTHOR]
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Titel: |
A Multi-Domain Magneto Tunnel Junction for Racetrack Nanowire Strips.
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Autor/in / Beteiligte Person: | Dutta, Prayash ; Lee, Albert ; Wang, Kang L. ; Jones, Alex K. ; Bhanja, Sanjukta |
Link: | |
Zeitschrift: | IEEE Transactions on Nanotechnology, Jg. 22 (2023-07-01), S. 581-583 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 1536-125X (print) |
DOI: | 10.1109/TNANO.2023.3298920 |
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