Low-Frequency Noise Characterization of 90 nm Multiple Gate Oxide CMOS Transistors.
In: AIP Conference Proceedings; 2005, Vol. 780 Issue 1, p331-334, 4p; Jg. 780 (2005-08-25) 1, S. 331-334
Konferenz
Zugriff:
The 1/f noise is investigated in 90 nm MOSFETs with nominal tox=1.5 and 2 nm prepared with and without a low-energy N or F ion implantation. It is found that a N or F implantation has no impact on the noise. The McWhorter’s noise component prevails at not too high currents I and the concentrations of the noisy oxide centers are found to be 4.2×1016 cm-3eV-1 in nMOSFETs and 5.1×1017 cm-3eV-1 in pMOSFETs. At high I the noise is due to the device series resistance. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]
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Titel: |
Low-Frequency Noise Characterization of 90 nm Multiple Gate Oxide CMOS Transistors.
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Autor/in / Beteiligte Person: | Lukyanchikova, N. ; Garbar, N. ; Smolanka, A. ; Lokshin, M. ; Lee, S. C. ; Simoen, E. ; Claeys, C. |
Quelle: | AIP Conference Proceedings; 2005, Vol. 780 Issue 1, p331-334, 4p; Jg. 780 (2005-08-25) 1, S. 331-334 |
Veröffentlichung: | 2005 |
Medientyp: | Konferenz |
ISSN: | 0094-243X (print) |
DOI: | 10.1063/1.2036762 |
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