Aligned InN nanofingers prepared by the ion-beam assisted filtered cathodic vacuum arctechnique.

We report the synthesis of aligned wurtzite InN nanofingers by the ion-beamassisted filtered cathodic vacuum arc technique. InN nanofingers exhibit apolycrystalline structure. Photoluminescence (PL) and field emission propertiesof the InN nanofingers were studied. The PL emission peak was centred at∼1.1 eV with a full width at half maximum of 105 meV. The field emissioncharacteristic was observed from the InN nanofingers with turn-on field of9.7 V µm−1 at a currentdensity of 10 µA cm−2. The formation of InN nanofingers was attributed to the Volmer–Weber growth mode. [ABSTRACT FROM AUTHOR]

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