High Performance 1.55 μm InGaAsP Buried-Heterostructure Laser Diodes Fabricated by Single-Step MOCVD Regrowth and Self-Aligned Technique.
In: Journal of The Electrochemical Society, Jg. 154 (2007-04-01), Heft 4, S. H263- (5S.)
academicJournal
Zugriff:
Titel: |
High Performance 1.55 μm InGaAsP Buried-Heterostructure Laser Diodes Fabricated by Single-Step MOCVD Regrowth and Self-Aligned Technique.
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Autor/in / Beteiligte Person: | Hu, Chih-Wei ; Lee, Feng-Ming ; Huang, Kun-Fu ; Tsai, Chia-Lung ; Wua, Meng-Chyi |
Zeitschrift: | Journal of The Electrochemical Society, Jg. 154 (2007-04-01), Heft 4, S. H263- (5S.) |
Veröffentlichung: | 2007 |
Medientyp: | academicJournal |
ISSN: | 0013-4651 (print) |
DOI: | 10.1149/1.2433695 |
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