Óxido de silicio SOG como dieléctrico de compuerta recocido a 200<superscript>°</superscript>C. (Spanish)
In: Superficies y Vacío, Jg. 24 (2011-03-01), Heft 1, S. 1-4
academicJournal
Zugriff:
Currently, the flexible electronics research field is of high interest because of the development of low cost products, such as solar cells and LCDs. Low temperature deposition processes are required in order to use flexible substrates. Nevertheless, the performance of the electronic devices built at temperatures below 350 °C is not as good as in CMOS technology. Thus, physical and electrical properties of semiconductor and insulator materials deposited at these low temperatures must be improved. In this work, characterization of SiO 2 annealed at 200°C has been done. The optical and electrical characterization showed that the refractive index (n) and dielectric constant (k) values are similar to those of thermally grown SiO 2 . As can be observed, these results suggest that this SiO 2 annealing at 200°C could be an alternative to improve electrical characteristics of TFTs, among other device applications. [ABSTRACT FROM AUTHOR]
En este trabajo, se ha realizado la caracterización del oxido de silicio SOG (SOG-SiO 2 ) depositado por la técnica sol-gel y recocido a 200 °C. Los resultados de la caracterización óptica y eléctrica muestran que los valores del índice de refracción (n) y de la constante dieléctrica (k) son muy cercanos a aquellos valores comúnmente reportados para el SiO 2 crecido térmicamente. Nuestros resultados sugieren que el SOG-SiO 2 recocido a 200 °C puede ser una alternativa para mejorar las características eléctricas de los transistores de película delgada (TFTs), entre otros dispositivos que son fabricados a bajas temperaturas. [ABSTRACT FROM AUTHOR]
Copyright of Superficies y Vacío is the property of Sociedad Mexicana de Ciencia y Tecnologia de Superficies y Materiales and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Titel: |
Óxido de silicio SOG como dieléctrico de compuerta recocido a 200<superscript>°</superscript>C. (Spanish)
|
---|---|
Autor/in / Beteiligte Person: | Domínguez-J., M. A. ; Rosales-Q., P. ; Torres-J., A. ; Molina-R., J. ; Moreno-M., M. ; Zúñiga-I., C. ; Calleja-A., W. |
Zeitschrift: | Superficies y Vacío, Jg. 24 (2011-03-01), Heft 1, S. 1-4 |
Veröffentlichung: | 2011 |
Medientyp: | academicJournal |
ISSN: | 1665-3521 (print) |
Schlagwort: |
|
Sonstiges: |
|