Performance Analysis of CNTFET on T Flip-Flop.
In: IUP Journal of Electrical & Electronics Engineering, Jg. 5 (2012-07-01), Heft 3, S. 57-66
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Zugriff:
Ultra Low power, High speed T flip-flop design is proposed in this paper. The design is based on Carbon Nanotube Field Effect Transistor (CNTFET) and is done in 32 nm technology. In order to increase the speed of flip-flop and to reduce the power dissipation CNTFET is used. CNTFET avoids most of the fundamental limitations of the traditional MOSFETs. This paper presents the performance analysis of CNTFET, structure, types of the new nano device, operation and various gate circuit design using CNTFET. This paper also presents the design and simulation of the T flip-flop. The results of the proposed design are compared with CMOS based T flip-flop. [ABSTRACT FROM AUTHOR]
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Titel: |
Performance Analysis of CNTFET on T Flip-Flop.
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Autor/in / Beteiligte Person: | Saravanan, V. ; Kannan, V. |
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Zeitschrift: | IUP Journal of Electrical & Electronics Engineering, Jg. 5 (2012-07-01), Heft 3, S. 57-66 |
Veröffentlichung: | 2012 |
Medientyp: | academicJournal |
ISSN: | 2583-519X (print) |
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