Study of Floating Gate MOS devices transients during switched bias irradiations.
In: Argentine School of Micro-Nanoelectronics Technology & Applications (EAMTA), 2010; 2010, p62-65, 4p
Konferenz
Zugriff:
Titel: |
Study of Floating Gate MOS devices transients during switched bias irradiations.
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Autor/in / Beteiligte Person: | Gacia lnza, M. ; Lipovetzky, J. ; Redin, E. ; Carbonetto, S. ; Salomone, L.S. ; Kasulin, A. ; Faigo?n, A. |
Quelle: | Argentine School of Micro-Nanoelectronics Technology & Applications (EAMTA), 2010; 2010, p62-65, 4p |
Veröffentlichung: | 2010 |
Medientyp: | Konferenz |
ISBN: | 978-1-4244-6747-1 (print) |
Sonstiges: |
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