Ferroelectric Nitride Heterostructures on CMOS Compatible Molybdenum for Synaptic Memristors.
In: ACS Applied Materials & Interfaces, Jg. 15 (2023-04-12), Heft 14, S. 18022-18031
academicJournal
Zugriff:
Titel: |
Ferroelectric Nitride Heterostructures on CMOS Compatible Molybdenum for Synaptic Memristors.
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Autor/in / Beteiligte Person: | Wang, Ping ; Wang, Ding ; Mondal, Shubham ; Hu, Mingtao ; Wu, Yuanpeng ; Ma, Tao ; Mi, Zetian |
Zeitschrift: | ACS Applied Materials & Interfaces, Jg. 15 (2023-04-12), Heft 14, S. 18022-18031 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 1944-8244 (print) |
DOI: | 10.1021/acsami.2c22798 |
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