A High-Q Floating Active Inductor Based VCO for L-Band and Lower C-Band Applications in 180 nm CMOS Technology.
In: Journal of the Institution of Engineers (India): Series B, Jg. 104 (2023-10-01), Heft 5, S. 1023-1033
Online
academicJournal
Zugriff:
Titel: |
A High-Q Floating Active Inductor Based VCO for L-Band and Lower C-Band Applications in 180 nm CMOS Technology.
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Autor/in / Beteiligte Person: | Hota, Aditya Kumar ; Sethi, Kabiraj ; Sooksood, Kriangkrai ; Mohapatra, Sushanta Kumar |
Link: | |
Zeitschrift: | Journal of the Institution of Engineers (India): Series B, Jg. 104 (2023-10-01), Heft 5, S. 1023-1033 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 2250-2106 (print) |
DOI: | 10.1007/s40031-023-00910-2 |
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