IMEC Reports Progress on High-k/Metal Gates.
In: Semiconductor International, Jg. 31 (2008), Heft 1, S. 20-20
Online
serialPeriodical
Zugriff:
The article reports on the findings of research commissioned by the Leuven, Belgium-based Interuniversity Microelectronics Centre (IMEC) regarding high-k dielectrics and tantalum carbide metal gates. The research found that the use of high-k dielectrics and tantalum carbide metal gates significantly improves the performance of planar complementary metal-oxide-semiconductor (CMOS). It states that the high threshold voltage (V t ) is the major challenge associated with using high-k dielectrics in CMOS devices.
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IMEC Reports Progress on High-k/Metal Gates.
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Autor/in / Beteiligte Person: | Peters, Laura |
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Zeitschrift: | Semiconductor International, Jg. 31 (2008), Heft 1, S. 20-20 |
Veröffentlichung: | 2008 |
Medientyp: | serialPeriodical |
ISSN: | 0163-3767 (print) |
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