Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications.
In: Journal of The Electrochemical Society, Jg. 155 (2008-03-01), Heft 3, S. H196- (6S.)
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Zugriff:
Conductive hafnium nitride films were deposited from a plasma-assisted atomic layer deposition (PA-ALD) process using a metallorganic hafnium precursor, tetrakis(ethylmethylamino)hafnium (TEMAH), using H 2 plasma as a reducing agent, at a substrate temperature of 250°C. The effects of radio frequency plasma pulse time and power on film resistivity, composition, and microstructure were investigated. The deposited films consisted of cubic HfN phase as shown by X-ray diffraction analysis, and the resistivity ranged from ∼2300 to 8200 Ω cm depending on the plasma conditions. The most conductive films were observed to result from conditions of higher plasma power, which is attributed to microstructural modifications as well as a decrease in N:Hf ratio, which approached unity at the highest plasma powers employed. Carbon incorporation in the form of HfC x phase was shown to be beneficial in terms of improving both post-rapid-thermal-anneal stability and electrical conductivity. A midgap work function (4.63 eV) was obtained for a HfN x electrode structure integrated into a metal-oxide-semiconductor capacitor featuring a SiO 2 dielectric. [ABSTRACT FROM AUTHOR]
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Titel: |
Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications.
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Autor/in / Beteiligte Person: | Consiglio, Steven ; Zeng, Wanxue ; Berliner, Nathaniel ; Eisenbraun, Eric T. |
Zeitschrift: | Journal of The Electrochemical Society, Jg. 155 (2008-03-01), Heft 3, S. H196- (6S.) |
Veröffentlichung: | 2008 |
Medientyp: | academicJournal |
ISSN: | 0013-4651 (print) |
DOI: | 10.1149/1.2827995 |
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