Crystallographic Orientation Dependence of the Schottky Properties of Au/SrTiO3Junctions

Crystallographic orientation dependence of the Schottky properties of Au/Nb-doped SrTiO3(STO:Nb) junctions has been investigated using single crystals of STO:Nb (1 0 0) and (1 1 1). It is found from electrical properties that the Schottky barrier height (SBH) of the Au/STO:Nb junctions estimated from current density (J)-voltage (V) characteristics shows crystallographic orientation dependence, while the flat band voltage estimated from capacitance (C)-voltage (V) characteristics is independent of the orientation. Displacement currents originated from the junction capacitance have been clearly observed at reverse bias voltage even in a condition of ∣dV/dt∣≥ 8.75 × 10−3[V/s] because of large electrostatic permittivity of the STO, and the displacement currents also showed crystallographic orientation dependence. The different response in the electrical properties of the Schottky junctions suggests that electric properties of intrinsic low permittivity layers, which exist at Au/STO:Nb interfaces, have the crystallographic orientation dependence.