Potential CCP Pulsed Plasma Application at Beol AIO Etch Process
In: ECS Transactions, Jg. 75 (2017-01-05), Heft 33, S. 21-26
serialPeriodical
Zugriff:
As COMS is being scaled down to 28nm node and beyond, CW plasmas etching processes are reaching their limits to satisfy the multiply stringent requirements, such as better uniformity, higher selectivity, less plasma induced damage, tighter critical dimension and profile control. The RF pulsed plasma is one of promising knobs to increase the flexibility of plasma processing by enlarging the range of operating conditions. Pulsed frequency and pulsed duty cycle are two main parameters characterizing the RF pulse. As the multiple-frequency RF powers have been introduced for the better control plasma flux and energy in CCP system, the effect of different RF power pulsed varies, bias only, source only and synchronized pulsed plasmas also shows quite different performances. In this work, MHM based all-in-one (AIO) etch processes were performed in one commercial CCP etcher, and the effects of pulsed plasmas on the etch process were analyzed. The different pulsed mode, pulsed duty cycle, pulsed frequency were tested on the AIO etching process in BEOL copper interconnects system. We compared the bias only, source only and synchronized pulsed plasma performances, checked the duty cycle and pulsed frequency effects. Compared with conventional CW plasmas, the performances of AIO etching process could be significantly improved via pulsed plasma, such as depth loading, chamfer profile control and higher selectivity to metal hard mask.
Titel: |
Potential CCP Pulsed Plasma Application at Beol AIO Etch Process
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Autor/in / Beteiligte Person: | Zhang, Long ; and, Yang He ; Zhang, Yang |
Zeitschrift: | ECS Transactions, Jg. 75 (2017-01-05), Heft 33, S. 21-26 |
Veröffentlichung: | 2017 |
Medientyp: | serialPeriodical |
ISSN: | 1938-5862 (print) ; 1938-6737 (print) |
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