Unprecedented Uniform 3D Growth Integration of 10-Layer Stacked Si Nanowires on Tightly Confined Sidewall Grooves
In: Nano Letters, Jg. 20 (2020-10-14), Heft 10, S. 7489-7497
serialPeriodical
Zugriff:
Bottom-up catalytic growth offers a high-yield, versatile, and powerful tool for the construction of versatile 3D nanocomplexes, while the major challenge is to achieve a precise location and uniformity control, as guaranteed by top-down lithography. Here, an unprecedented uniform and reliable growth integration of 10-layer stacked Si nanowires (SiNWs) has been accomplished, for the very first time, via a new groove-confined and tailored catalyst formation and guided growth upon the truncated sidewall of SiO2/SiNxmultilayers. The SiNW array accomplishes a narrow diameter of Dnw= 28 ± 2.4 nm, NW-to-NW spacing of tsp= 40 nm, and extremely stable growth over Lnw> 50 μm and bending locations, which can compete with or even outperform the state-of-the-arttop-down lithography and etching approaches, in terms of stacking number, channel uniformity at different levels, fabrication cost, and efficiency. These results provide a solid basis to establish a new 3D integration approach to batch-manufacture various advanced electronic and sensor applications.
Titel: |
Unprecedented Uniform 3D Growth Integration of 10-Layer Stacked Si Nanowires on Tightly Confined Sidewall Grooves
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Autor/in / Beteiligte Person: | Hu, Ruijin ; Xu, Shun ; Wang, Junzhuan ; Shi, Yi ; Xu, Jun ; Chen, Kunji ; Yu, Linwei |
Zeitschrift: | Nano Letters, Jg. 20 (2020-10-14), Heft 10, S. 7489-7497 |
Veröffentlichung: | 2020 |
Medientyp: | serialPeriodical |
ISSN: | 1530-6984 (print) ; 1530-6992 (print) |
DOI: | 10.1021/acs.nanolett.0c02950 |
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