Reduced Process Method for Thin-Film-Transistor Liquid-Crystal Display (TFT-LCD) with Dry-Etching Tapered ITO Data Bus Lines
In: Japanese Journal of Applied Physics, Jg. 35 (1996-08-01), Heft 8, S. L1027
serialPeriodical
Zugriff:
For years, many studies have been conducted for the purpose of reducing the number of TFT processes. We have developed a top-gate TFT-LCD fabricated using only indium-tin-oxide (ITO: In2O3-SnO2) data bus lines by eliminating the metal data bus line process. Substituting ITO dry-etching for wet-etching allows tapering of the side walls of thick ITO data bus lines. Controlling the tapered angle of ITO data bus lines to be less than 40° results in successful fabrication of a transistor with no offset voltage. As a result, we have developed a 6-inch-diagonal TFT-LCD fabricated with data bus lines as well as drain-source electrodes of single-layered ITO.
Titel: |
Reduced Process Method for Thin-Film-Transistor Liquid-Crystal Display (TFT-LCD) with Dry-Etching Tapered ITO Data Bus Lines
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Autor/in / Beteiligte Person: | Ugai, Yasuhiro ; Yukawa, Teizo ; Yoshihisa Hatta, Yoshihisa Hatta ; Shigeo Aoki, Shigeo Aoki |
Zeitschrift: | Japanese Journal of Applied Physics, Jg. 35 (1996-08-01), Heft 8, S. L1027 |
Veröffentlichung: | 1996 |
Medientyp: | serialPeriodical |
ISSN: | 0021-4922 (print) ; 1347-4065 (print) |
DOI: | 10.1143/JJAP.35.L1027 |
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